to-126 parameter l value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7.0 v collector current i c 5.0 a collector peak current i c(peak) 8.0 a total dissipation at p tot 20 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SD1691 / 2sb1151 description parameter symbol test conditions min. typ. max. unit collector cutoff current i cbo v cb =50v, i e =0 10 ua emitter cut-off current i ebo v eb =7.0v, i c =0 10 ua collector-emitter sustaining voltage v ceo i c =10ma, i b =0 60 v dc current gain h fe(1) v ce =1.0v, i c =0.1a 60 h fe(2) v ce =1.0v, i c =2.0a 100 400 h fe(3) v ce =1.0v, i c =5.0a 50 collector-emitter saturation voltage v ce(sat) i c =2.0a,i b =0.2a 0.3 v base - emitter saturation voltage v be(sat) i c =2.0a,i b =0.2a 1.2 v storage time t stg i c =2.0a, i b1 =-i b2 =0.2a 2.5 us complementary silicon power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics east semiconductor co., ltd phone: 86-510-83880883 fax: 86-510-83883883 absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o hfe(2): m 100~200, l 160~320, k 200~400 tiger electronic co.,ltd
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